AGM307MNQ Datasheet - AGMSEMI

AGM307MNQ MOSFET

AGM307MNQ Features

* BVDSS RDSON ID 30V 7.5mΩ 42A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching WQFN5

* 6 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous R

Datasheet Details

AGM307MNQ

AGMSEMI

713.05 KB

Mosfet.

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