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AGM307MNQ MOSFET

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Description

AGM307MNQ * General .
The AGM307MNQ combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM307MNQ
Manufacturer
AGMSEMI
File Size
713.05 KB
Datasheet
AGM307MNQ-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 30V 7.5mΩ 42A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching WQFN5
* 6 Pin Configuration
* Low Thermal resistance

AGM307MNQ Distributors

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