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AGM412D MOSFET

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Description

AGM412D * General .
The AGM412D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM412D
Manufacturer
AGMSEMI
File Size
485.73 KB
Datasheet
AGM412D-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 40V 10mΩ 30A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-252 Pin Configuration D
* Low Thermal resistance

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