AGM412D Datasheet - AGMSEMI

AGM412D MOSFET

AGM412D Features

* BVDSS RDSON ID 40V 10mΩ 30A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-252 Pin Configuration D

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Recti

Datasheet Details

AGM412D

AGMSEMI

485.73 KB

Mosfet.

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