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AGM412MAP MOSFET

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Description

AGM412MAP * General .
The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM412MAP
Manufacturer
AGMSEMI
File Size
469.99 KB
Datasheet
AGM412MAP-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 40V 13mΩ 22A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3
* 3 Pin Configuration
* Low Thermal resistance

AGM412MAP Distributors

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