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AGM412S MOSFET

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Description

AGM412S * General .
The AGM412S combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM412S
Manufacturer
AGMSEMI
File Size
688.74 KB
Datasheet
AGM412S-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 40V 11mΩ 13A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching SOP-8 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested

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