AGM612S Datasheet - AGMSEMI

AGM612S MOSFET

AGM612S Features

* BVDSS RDSON ID 60V 11mΩ 11A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching SOP8 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore DD D

* SMPS 2nd Synchronous Rec

Datasheet Details

AGM612S

AGMSEMI

732.23 KB

Mosfet.

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