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AGM612MN Datasheet - AGMSEMI

AGM612MN MOSFET

AGM612MN Features

* BVDSS RDSON ID 60V 13mΩ 11A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* Application

* MB/VGA Vcore SOP8 Pin Configuration D1 D1 D2 D2

* SMPS 2nd Synchronou

Datasheet Details

AGM612MN

AGMSEMI

712.78 KB

Mosfet.

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