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AGM612MN - MOSFET

AGM612MN Description

AGM612MN * General .
The AGM612MN combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

AGM612MN Features

* BVDSS RDSON ID 60V 13mΩ 11A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance

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Datasheet Details

Part number
AGM612MN
Manufacturer
AGMSEMI
File Size
712.78 KB
Datasheet
AGM612MN-AGMSEMI.pdf
Description
MOSFET

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