AGM665E Datasheet - AGMSEMI

AGM665E MOSFET

AGM665E Features

* BVDSS RDSON ID 60V 60mΩ 3A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching SOT23-3 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectif

Datasheet Details

AGM665E

AGMSEMI

907.62 KB

Mosfet.

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