AGMH6035D
AGMSEMI
1.08MB
Mosfet. The AGMH6035D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device
TAGS
📁 Related Datasheet
AGMH603H - MOSFET
(AGMSEMI)
AGMH603H
● General Description
The AGMH603H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
AGMH606C - MOSFET
(AGMSEMI)
AGMH606C
● General Description
The AGMH606C bines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide ex.
AGMH6080H - MOSFET
(AGMSEMI)
AGMH6080H
● General Description
The AGMH6080H bines advanced trenchMOSFET
Product Summary
technology with a low resistance package to provide ex.
AGMH612D - MOSFET
(AGMSEMI)
AGMH612D
● General Description
The AGMH612D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
AGMH022N10C - MOSFET
(AGMSEMI)
AGMH022N10C
● General Description
The AGMH022N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH022P10H - MOSFET
(AGMSEMI)
AGMH022P10H
● General Description The AGMH022P10H bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH035N10A - MOSFET
(AGMSEMI)
AGMH035N10A
● General Description
The AGMH035N10A bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH035N10C - MOSFET
(AGMSEMI)
AGMH035N10C
● General Description
The AGMH035N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGMH10P15C - MOSFET
(AGMSEMI)
AGMH10P15C
● General Description
The AGMH10P15C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGMH12H05H - MOSFET
(AGMSEMI)
AGMH12H05H
● General Description
The AGMH12H05H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.