AGMH6080H Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 60V 6.2mΩ 66A

* Advance high cell density Trench technology TO-263 Pin Configuration

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching D

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Applic

AGMH6080H

AGMSEMI

691.05 KB

Mosfet.

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AGMH6080H MOSFET AGMSEMI

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