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AGMS5N50D - MOSFET

AGMS5N50D Description

AGMS5N50D * General .
The AGMS5N50D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

AGMS5N50D Features

* BVDSS RDSON ID 500V 1.4Ω 5A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D

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Datasheet Details

Part number
AGMS5N50D
Manufacturer
AGMSEMI
File Size
1.44 MB
Datasheet
AGMS5N50D-AGMSEMI.pdf
Description
MOSFET

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