AGMS5N50D Datasheet - AGMSEMI

AGMS5N50D MOSFET

AGMS5N50D Features

* BVDSS RDSON ID 500V 1.4Ω 5A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance TO-252 Pin Configuration D

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Recti

Datasheet Details

AGMS5N50D

AGMSEMI

1.44 MB

Mosfet.

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