AP120N04BD - 40V N-Channel Enhancement Mode MOSFET
AP120N04BD 40V N-Channel Enhancement Mode MOSFET The AP120N04BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Fea
AP120N04BD Features
* VDS = 40V ID =120A RDS(ON) < 3.8mΩ @ VGS=10V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP120N04BD TO-252-3L AP120N04BD XXX YYYY Absolute Maximum Ratings@Tj=25oC(unless otherwise s
