AP120N06BD Datasheet - APM

AP120N06BD 60V N-Channel Enhancement Mode MOSFET

AP120N06BD 60V N-Channel Enhancement Mode MOSFET The AP120N06BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Feat.

AP120N06BD Features

* VDS = 60V ID =120A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP120N06BD TO-252-3L AP120N06BD XXX YYYY Absolute Maximum Ratings@Tj=25oC(unless otherwise s

AP120N06BD-APM.pdf