AP60G02NF - 20V N+P-Channel Enhancement Mode MOSFET

APM

Datasheet Details

Part number	AP60G02NF
Manufacturer	APM
File Size	1.11 MB
Description	20V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP60G02NF-APM.pdf

The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V ID =65A RDS(ON) < 6.5mΩ @ VGS=4.5V（Type：4.8mΩ） VDS = -20V ID =-62A RDS(ON) < 8.5mΩ @ VGS=-4.5V（Type：6.8mΩ）.

📁 AP60G02NF Similar Datasheet

AP6000 - TRANSFORMERS (apx)
AP6001 - TRANSFORMERS (apx)
AP6002 - TRANSFORMERS (apx)
AP6003 - TRANSFORMERS (apx)
AP6004 - TRANSFORMERS (apx)
AP601 - High Dynamic Range HBT Amplifier (WJ Communications)
AP6015 - High Efficiency Step-Down Low Power DC-DC Converter (Diodes Incorporated)
AP60150R - Psu Bench Auto Range 3000w (ETC)

Other Datasheets by APM

Published: Apr 5, 2025 |