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AP60G02NF - 20V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V ID =65A RDS(ON) < 6.5mΩ @ VGS=4.5V（Type：4.8mΩ） VDS = -20V ID =-62A RDS(ON) < 8.5mΩ @ VGS=-4.5V（Type：6.8mΩ）.

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Datasheet preview – AP60G02NF

Datasheet Details

Part number AP60G02NF
Manufacturer APM
File Size 1.11 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP60G02NF Datasheet
Additional preview pages of the AP60G02NF datasheet.

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Full PDF Text Transcription

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AP60G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =65A RDS(ON) < 6.5mΩ @ VGS=4.5V（Type：4.8mΩ） VDS = -20V ID =-62A RDS(ON) < 8.5mΩ @ VGS=-4.5V（Type：6.
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