AP6G02BF - 20V N+P-Channel Enhancement Mode MOSFET

APM

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Datasheet Details

Part number	AP6G02BF
Manufacturer	APM
File Size	1.19 MB
Description	20V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP6G02BF-APM.pdf

AP6G02BF Product details

Description

AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET The AP6G02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.General

Features

VDS = 20V ID =8.5A RDS(ON) < 22mΩ @ VGS=10V （Type：14mΩ） VDS = -20V ID =-7.8A RDS(ON) < 32mΩ @ VGS=-10V（Type：23mΩ）.

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Published: Mar 4, 2025 |