AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET

APM

Description

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AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET The AP6G02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.

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Datasheet Specifications

Part number: AP6G02BF
Manufacturer: APM
File Size: 1.19 MB
Datasheet: AP6G02BF-APM.pdf
Description: 20V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP6G02BF REV1.0 AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Volt

AP6G02BF Distributors

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AP6G02BF 20V N +P-Channel Enhancement Mode MOSFET APM

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