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AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET

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Description

AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET .
The AP6G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
AP6G02LI
Manufacturer
APM
File Size
1.39 MB
Datasheet
AP6G02LI-APM.pdf
Description
20V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Max.
* 35 40 1.2 1 5 ±100
* 3.6 1.2 Unit V mΩ mΩ V uA nA S nC ns pF A V 2 AP6G02LI REV1.0 AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET P

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