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AP6G06S - 60V N+P-Channel Enhancement Mode MOSFET

AP6G06S Description

AP6G06S 60V N+P-Channel Enhancement Mode MOSFET .
The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

AP6G06S Applications

* , should be limited by total power dissipation. 2 AP6G06S REV1.0 AP6G06S 60V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ =25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -6

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Datasheet Details

Part number
AP6G06S
Manufacturer
APM
File Size
1.13 MB
Datasheet
AP6G06S-APM.pdf
Description
60V N+P-Channel Enhancement Mode MOSFET

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60V N +P-Channel Enhancement Mode MOSFET APM
APM AP6G06S-like datasheet