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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

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Description AP90N03D 30V N-Channel Enhancement Mode MOSFET The AP90N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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APM2321 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ V =-4.5V GS RDS(ON)=560mΩ(typ.) @

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APM2321A P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-1.2A , RDS(ON)=370mΩ (typ.) @ VGS=-4.5V RDS(ON)=560mΩ (typ.) @ V

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APM4568J Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS =

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APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) =

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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APM4317K Features • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reli

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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APM4910K Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 30V/7A, RDS(ON) = 22mΩ (typ.) @ VGS = 10V R DS(ON) = 26mΩ (typ.) @ V G

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APM32F103x4x6x8xB ARM® Cortex®-M3 based 32-bit MCU Version: V 1.2 1. Features  System Architecture - 32-bit ARM® Cortex®-M3 core - Up to 96MHz worki

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APM4010NU N-Channel Enhancement Mode MOSFET Features • 40V/57A, RDS(ON)=8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V Pin Description • • Su

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APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V

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sales.Mr.wang13826508770 www.sztssd.com APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET tech

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sales.Mr.wang13826508770 www.sztssd.com AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology

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Description AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate cha

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APM1105NFP Features • 100V/16A, RDS(ON)= 80mΩ(typ.) @ VGS= 10V R= DS(ON) 130mΩ(typ.) @ V= GS 4.5V • ESD Protected • Reliable and Rugged • L

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APM2556NU N-Channel Enhancement Mode MOSFET Features • 25V/60A, RDS(ON)=4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V Pin Description G D

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