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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

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APM4910K Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 30V/7A, RDS(ON) = 22mΩ (typ.) @ VGS = 10V R DS(ON) = 26mΩ (typ.) @ V G

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APM4317K Features • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reli

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APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V

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APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) =

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Description AP90N03D 30V N-Channel Enhancement Mode MOSFET The AP90N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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APM2321A P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-1.2A , RDS(ON)=370mΩ (typ.) @ VGS=-4.5V RDS(ON)=560mΩ (typ.) @ V

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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APM4010NU N-Channel Enhancement Mode MOSFET Features • 40V/57A, RDS(ON)=8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V Pin Description • • Su

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APM4568J Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS =

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APM1105NFP Features • 100V/16A, RDS(ON)= 80mΩ(typ.) @ VGS= 10V R= DS(ON) 130mΩ(typ.) @ V= GS 4.5V • ESD Protected • Reliable and Rugged • L

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AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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APM2321 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ V =-4.5V GS RDS(ON)=560mΩ(typ.) @

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Datasheet APM32F030x4x6x8 Arm® Cortex®-M0+ based 32-bit MCU Version: V1.6 www.geehy.com Page Product characteristics  System Architecture 32-bit A

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APM2556NU N-Channel Enhancement Mode MOSFET Features • 25V/60A, RDS(ON)=4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V Pin Description G D

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www.DataSheet4U.com APM2054N N-Channel Enhancement Mode MOSFETE Features • • • • 20V/6A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V

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APM9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4

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