APM Datasheet | Specifications & PDF Download

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description 5 / 5 / & % $ # , , , , -20V/-6A, RDS(ON)

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Datasheet APM32F072xBT7 Arm® Cortex®-M0+ based 32-bit MCU Version: V1.0 1 Product Characteristics  Core – 32-bit Arm® Cortex®-M0+Core – Up to 48MHz

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sales.Mr.wang13826508770 www.sztssd.com Description AP100N03D 30V N-Channel Enhancement Mode MOSFET The AP100N03D uses advanced trench technology t

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Description AP90N03D 30V N-Channel Enhancement Mode MOSFET The AP90N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Description AP240N03NF 30V N-Channel Enhancement Mode MOSFET The AP240N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gat

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Description AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02CDF uses advanced trench technology to provide excellent RDS(ON), low gate

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APM2510NUC-TRL-VB APM2510NUC-TRL-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10

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AP70N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP70N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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Datasheet APM32E030x8 Arm® Cortex® -M0+ -based 32-bit MCU Version: V1.0 1 Product Characteristics ◼ System Architecture – 32-bit Arm® Cortex®-M0+ cor

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Datasheet APM32F103xC Arm® Cortex®-M3 based 32-bit MCU Version: V1.3 1. Product characteristics  Core 32-bit Arm® Cortex®-M3 core Up to 96MHz work

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AP120N10D 100V N-Channel Enhancement Mode MOSFET Description The AP120N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate c

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AP1N50SI 500V N-Channel Enhancement Mode MOSFET Description The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned plan

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Datasheet APM32E030x8 Arm® Cortex® -M0+ -based 32-bit MCU Version: V1.0 1 Product Characteristics ◼ System Architecture – 32-bit Arm® Cortex®-M0+ cor

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Description AP5P04MI -40V P-Channel Enhancement Mode MOSFET The AP5P04MI uses advanced trench technology to provide excellent RDS(ON), low gate char

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APM4008NG-VB APM4008NG-VB Datasheet N-Channel 40 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.005 at VGS = 10 V 40 0.

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APM4317K Features • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reli

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Description AP150N03D 30V N-Channel Enhancement Mode MOSFET The AP150N03D uses advanced trench technology to provide excellent RDS(ON), low gate cha

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Datasheet APM32E030x8 Arm® Cortex® -M0+ -based 32-bit MCU Version: V1.0 1 Product Characteristics ◼ System Architecture – 32-bit Arm® Cortex®-M0+ cor

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Description AP7N65FIP 650V N-Channel Enhancement Mode MOSFET The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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