AP100N03D Datasheet | APM

Description 30V N-Channel Enhancement Mode MOSFET The AP100N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：3.6mΩ） Only Application Battery protection Use Load switch Uninterruptible power supply times Package Marking and Ordering Information g Product ID Pack en AP100N03D TO-252-3L sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) g Symbol Parameter Ton VDSS Drain-Source Voltage VGSS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Marking AP100N03D XXX YYYY Max. 30 ±20 100 59 Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Avalanche Current PD@TC=25℃ Total Power Dissipation4 RθJA Thermal Resistance Junction-ambient (Steady State)1 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) RθJC Thermal Resistance, Junction to Case TJ,...