DESCRIPTION
AP100N03D 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：3.6mΩ） Only Application Battery protection Use Load switch Uninterruptible power supply times Package Marking and Ordering Information g Product ID Pack en AP100N03D TO-252-3L sh ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) g Symbol Parameter Ton VDSS Drain-Source Voltage VGSS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Marking AP100N03D XXX YYYY Max. 30 ±20 100 59 IDM Pulsed Drain Current note1 360 EAS Single Pulsed Avalanche Energy note2 95 IAS Avalanche Current 19.5 PD@TC=25℃ Total Power Dissipation4 68 RθJA Thermal Resistance Junction-ambient (Steady State)1 62 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 RθJC Thermal Resistance, Junction to Case 2.2 TJ, TSTG Operating and Storage Temperature Range -55 to +175 Qty(PCS) 2500 Units V V A A A mJ A W ℃/W ℃/W ℃/W ℃ A...
APM
