AP100N03BD Datasheet | APM

Description 30V N-Channel Enhancement Mode MOSFET The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack TO-252-3L Marking AP100N03BD XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range Rating 30 ±20 100 380 110 45 52 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 62.5 2.2 Qty(PCS) 2500 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP100N03BD RVE1.0 永源微電子科技有限公司 30V N-Channel Enhancement Mode...