DESCRIPTION
AP100N03BD 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP100N03BD TO-252-3L Marking AP100N03BD XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range Rating 30 ±20 100 55 380 110 45 52 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 62.5 2.2 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP100N03BD RVE1.0 永源微電子科技有限公司 1 AP100N03BD 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
