Datasheet Details
| Part number | AP100N03BD |
|---|---|
| Manufacturer | APM |
| File Size | 1.63 MB |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP100N03BD Datasheet
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General Description
The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 30V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ）.