AP100N03T Datasheet | APM

Description AP100N03P/T 30V N-Channel Enhancement Mode MOSFET The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP100N03P TO-220-3L TO-263-3L Marking AP100N03P XXX YYYY AP100N03T XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDSS Parameter Drain-Source Voltage VGSS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 PD@TC=25℃ RθJA RθJA RθJC Total Power Dissipation4 Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range Max. 30 ±20 100 46 300 56 68 62 25 2.2 -55 to +175 Qty(PCS) 1000 800 Units V V A A A m J W ℃/W ℃/W ℃/W ℃ AP100N03P/T RVE3.9 永源微電子科技有限公司...