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AP100N03T - 30V N-Channel Enhancement Mode MOSFET

Download the AP100N03T datasheet PDF. This datasheet also covers the AP100N03P variant, as both devices belong to the same 30v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ）.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP100N03P-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP100N03T
Manufacturer APM
File Size 1.41 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP100N03T Datasheet

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Other Datasheets by APM

Part Number Description
AP100N03BD 30V N-Channel Enhancement Mode MOSFET
AP100N03D 30V N-Channel Enhancement Mode MOSFET
AP100N03P 30V N-Channel Enhancement Mode MOSFET
AP100N02D 20V N-Channel Enhancement Mode MOSFET
AP100N06NF 60V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP100N03P/T 30V N-Channel Enhancement Mode MOSFET The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.