AP100N02D Datasheet | APM

Description 20V N-Channel Enhancement Mode MOSFET The AP100N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking TO252-3L AP100N02D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage Max. 20 VGSS ID@TC=25℃ ID@TC=100℃ IDM EAS PD RθJC TJ, TSTG Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range ±12 100 59 360 110 81 1.85 -55 to +150 Qty(PCS) 2500 Units V V A A A m J W ℃/W ℃ AP100N02D RVE1.0 永源微電子科技有限公司 20V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20...