AP100N02D - 20V N-Channel Enhancement Mode MOSFET

APM

General Description

operation with gate voltages as low as 2.5V.

Battery protection or in other Switching application.

Key Features

VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ).

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AP100N02D 20v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP100N02D
Manufacturer	APM
File Size	576.60 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AP100N02D Datasheet

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Description AP100N02D 20V N-Channel Enhancement Mode MOSFET The AP100N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP100N02D TO252-3L AP100N02D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage Max.