AP100N06NF - 60V N-Channel Enhancement Mode MOSFET

APM

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 60V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V （Type：3.5mΩ）.

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AP100N06NF 60v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP100N06NF
Manufacturer	APM
File Size	1.46 MB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	AP100N06NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP100N06NF 60V N-Channel Enhancement Mode MOSFET The AP100N06NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V （Type：3.