AP100N06NF Datasheet | APM

Description 60V N-Channel Enhancement Mode MOSFET The AP100N06NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =100A RDS(ON) < 4.5mΩ @ VGS=10V （Type：3.5mΩ） Application Battery protection UPS Package Marking and Ordering Information Product ID Pack PDFN5- 6-8L Marking AP100N06NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current1,6 ID@TC=100℃ Continuous Drain Current1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA RθJC Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 100 61 380 80 40 73.5 -55 to 150 -55 to 150 51...