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AP6G04S - 40V N+P-Channel Enhancement Mode MOSFET

General Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

  • VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ） Only VDS = -40V ID =-6.1A RDS(ON) < 75mΩ @ VGS=-10V （Type：62mΩ）.

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Datasheet Details

Part number AP6G04S
Manufacturer APM
File Size 2.12 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP6G04S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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sales.Mr.wang13826508770 www.sztssd.com Description AP6G04S 40V N+P-Channel Enhancement Mode MOSFET The AP6G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ） Only VDS = -40V ID =-6.