AP6G04S
AP6G04S is 40V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
40V N+P-Channel Enhancement Mode MOSFET
The AP6G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ）
Only
VDS = -40V ID =-6.1A RDS(ON) < 75mΩ @ VGS=-10V （Type：62mΩ）
Application
Wireless charging Boost driver Brushless motor
Use times ng Package Marking and Ordering Information
Product ID
Pack
Marking he AP6G04S
SOP-8
AP6G04S XXX YYYY gs Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Ton Symbol
Parameter
Rating N-Ch
P-Ch
VDS r VGS Fo ID@TA=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1
40 ±20 6.3
-40 ±20 -6.1
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
-4.8
Pulsed Drain Current2
-22
Single Pulse Avalanche Energy3
IAS PD@TA=25℃
Avalanche Current Total Power Dissipation4
-6.8...
