DESCRIPTION
AP6G04S 40V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ） Only VDS = -40V ID =-6.1A RDS(ON) < 75mΩ @ VGS=-10V （Type：62mΩ） Application Wireless charging Boost driver Brushless motor Use times ng Package Marking and Ordering Information Product ID Pack Marking he AP6G04S SOP-8 AP6G04S XXX YYYY gs ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Ton Symbol Parameter Rating N-Ch P-Ch VDS rVGS Fo ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 40 ±20 6.3 -40 ±20 -6.1 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.9 -4.8 IDM Pulsed Drain Current2 23 -22 EAS Single Pulse Avalanche Energy3 16.2 39 IAS PD@TA=25℃ Avalanche Current Total Power Dissipation4 6.8 -6.8 1.67 1.67 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 75 RθJC Thermal Resistance Junction-Case1 30...
APM
