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AP6G02BF - 20V N+P-Channel Enhancement Mode MOSFET

General Description

The AP6G02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =8.5A RDS(ON) < 22mΩ @ VGS=10V （Type：14mΩ） VDS = -20V ID =-7.8A RDS(ON) < 32mΩ @ VGS=-10V（Type：23mΩ）.

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Datasheet Details

Part number AP6G02BF
Manufacturer APM
File Size 1.19 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP6G02BF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP6G02BF 20V N+P-Channel Enhancement Mode MOSFET The AP6G02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =8.5A RDS(ON) < 22mΩ @ VGS=10V （Type：14mΩ） VDS = -20V ID =-7.8A RDS(ON) < 32mΩ @ VGS=-10V（Type：23mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP6G02BF QFN2X2-6L Marking AP6G02BF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.5 -7.