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AP60G02NF - 20V N+P-Channel Enhancement Mode MOSFET

General Description

The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =65A RDS(ON) < 6.5mΩ @ VGS=4.5V（Type：4.8mΩ） VDS = -20V ID =-62A RDS(ON) < 8.5mΩ @ VGS=-4.5V（Type：6.8mΩ）.

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Datasheet Details

Part number AP60G02NF
Manufacturer APM
File Size 1.11 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP60G02NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP60G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =65A RDS(ON) < 6.5mΩ @ VGS=4.5V（Type：4.8mΩ） VDS = -20V ID =-62A RDS(ON) < 8.5mΩ @ VGS=-4.5V（Type：6.