AP60G02NF
AP60G02NF is 20V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 20V ID =65A
RDS(ON) < 6.5mΩ @ VGS=4.5V(Type:4.8mΩ)
VDS = -20V ID =-62A
RDS(ON) < 8.5mΩ @ VGS=-4.5V(Type:6.8mΩ)
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
PDFN5- 6-8L
AP60G02NF XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Drain-Source Voltage
-20
Gate-Source Voltage
±12
±12
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
-62
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
-37.5
Pulsed Drain...