AP60N04D Datasheet | APM

Description 40V N-Channel Enhancement Mode MOSFET The AP60N04D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =40V ID =60A RDS(ON) < 13mΩ @ VGS=10V （Type：9.5mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack TO-252-3L Marking AP60N04D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ PD@TA=25℃ Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 Rating 40 ±20 60 26 100 31 25 34.7 2 -55 to 150 -55 to 150 62...