DESCRIPTION
AP60N04D 40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS =40V ID =60A RDS(ON) < 13mΩ @ VGS=10V （Type：9.5mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP60N04D TO-252-3L Marking AP60N04D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ PD@TA=25℃ Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 Rating 40 ±20 60 26 100 31 25 34.7 2 -55 to 150 -55 to 150 62 3.6 Qty(PCS) 2500 Units V V A A A mJ A W W ℃ ℃ ℃/W ℃/W AP60N04D RVE3.9 永源微電子科技有限公司 1 AP60N04D 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
