AP60H04NF Datasheet | APM

Description 40V N+N-Channel Enhancement Mode MOSFET The AP60H04NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =60A RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ） Ciss≈1204 PF Application Wireless charging Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking PDFN5- 6-8L AP60H04NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 40 ±20 60 40 250 36 27 42 -55 to 150 -55 to 150 25 3.0 Qty(PCS) 5000 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP60H04NF REV1.0 永源微電子科技有限公司 40V N+N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250u...