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AP60H04NF - 40V N+N-Channel Enhancement Mode MOSFET

General Description

The AP60H04NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =60A RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ） Ciss≈1204 PF.

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Datasheet Details

Part number AP60H04NF
Manufacturer APM
File Size 744.37 KB
Description 40V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP60H04NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP60H04NF 40V N+N-Channel Enhancement Mode MOSFET The AP60H04NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =60A RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.