AP60N10NF Datasheet | APM

Description The AP60N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =60A RDS(ON) < 12mΩ @ VGS=10V (Type：9mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack PDFN5- 6-8L Marking AP60N10NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 100 ±20 63 252 286 24 83 -55 to 150 -55 to 150 Qty(PCS) 5000 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP60N10NF REV1.0 永源微電子科技有限公司 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise...