DESCRIPTION
GENERAL FEATURES
VDS = 100V ID =60A RDS(ON) < 12mΩ @ VGS=10V (Type：9mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP60N10NF PDFN5*6-8L Marking AP60N10NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 100 ±20 63 40 252 286 24 83 -55 to 150 -55 to 150 1.5 25 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP60N10NF REV1.0 永源微電子科技有限公司 1 AP60N10NF 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions V(BR)DSS Drain-Source Breakdown Voltage ID = 250uA, VGS = 0V Min.
APM
