DESCRIPTION
GENERAL FEATURES
VDS = 20V ID =7.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：28mΩ） VDS = -20V ID =-6.8A RDS(ON) < 40mΩ @ VGS=-4.5V（Type：35mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP6G02LI SOT23-6L Marking AP6G02LI ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±12 ±12 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.5 -6.8 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 5.2 -4.5 IDM Pulsed Drain Current2 24 -28 EAS Single Pulse Avalanche Energy3 24 68 PD@TA=25℃ Total Power Dissipation4 1.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 105 RθJC Thermal Resistance Junction-Case1 45 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP6G02LI REV1.0 永源微電子科技有限公司 1 AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET N-ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
