AP6G02LI
AP6G02LI is 20V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP6G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 20V ID =7.5A
RDS(ON) < 35mΩ @ VGS=4.5V （Type：28mΩ）
VDS = -20V ID =-6.8A
RDS(ON) < 40mΩ @ VGS=-4.5V（Type：35mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
SOT23-6L
Marking AP6G02LI
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Drain-Source Voltage
-20
Gate-Source Voltage
±12
±12
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
-6.8
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
-4.5
Pulsed Drain Current2
-28
Single Pulse Avalanche...
