AP6G06S Description
The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
- Part: AP6G06S
- Manufacturer: APM
- Size: 1.13 MB
Related APM Datasheets
| Part Number | Description |
|---|---|
| AP6G02BF | 20V N+P-Channel Enhancement Mode MOSFET |
| AP6G02LI | 20V N+P-Channel Enhancement Mode MOSFET |
| AP6G04S | 40V N+P-Channel Enhancement Mode MOSFET |
| AP60G02NF | 20V N+P-Channel Enhancement Mode MOSFET |
| AP60H04NF | 40V N+N-Channel Enhancement Mode MOSFET |