AP6G06S datasheet by APM.
| Part number | AP6G06S |
|---|---|
| Datasheet | AP6G06S-APM.pdf |
| File Size | 1.13 MB |
| Manufacturer | APM |
| Description | 60V N+P-Channel Enhancement Mode MOSFET |
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The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Part Number | Description |
|---|---|
| AP6G02BF | 20V N+P-Channel Enhancement Mode MOSFET |
| AP6G02LI | 20V N+P-Channel Enhancement Mode MOSFET |
| AP6G04S | 40V N+P-Channel Enhancement Mode MOSFET |
| AP60G02NF | 20V N+P-Channel Enhancement Mode MOSFET |
| AP60H04NF | 40V N+N-Channel Enhancement Mode MOSFET |
| AP60N03D | 30V N-Channel Enhancement Mode MOSFET |
| AP60N04D | 40V N-Channel Enhancement Mode MOSFET |
| AP60N06NF | 65V N-Channel Enhancement Mode MOSFET |
| AP60N10NF | 100V N-Channel Enhancement Mode MOSFET |
| AP6H06S | 60V N+N-Channel Enhancement Mode MOSFET |
