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AP6G06S Datasheet PDF

APM AP6G06S

The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP6G06S
Datasheet AP6G06S Download
Manufacturer
APM
Description 60V N+P-Channel Enhancement Mode MOSFET
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AP6G06S datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V(Type:40mΩ) VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V(Type:70mΩ) Application Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking AP6G06S SOP-8L AP6G06S XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter Rating N-Channel P-Channel VDS Drain-Source Voltage 60 -60 VGS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TSTG Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range ±20 ±20 6.5 -6.2 3.1 -2.8 27 25.5 21 21.8 1.5 1.3 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ AP6G06S REV1.0 永源微電子科技有限公司 1 AP6G06S 60V N+P-Channel Enhancement Mode MOSFET N-

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units...
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