AP6G06S
AP6G06S is 60V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V（Type：70mΩ） Application
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
SOP-8L
AP6G06S XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
N-Channel
P-Channel
Drain-Source Voltage
-60
VGS ID@TA=25℃ ID@TA=70℃
IDM EAS PD@TA=25℃ TSTG
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2 Single Pulse Avalanche Energy3
Total Power Dissipation4 Storage Temperature Range
±20
±20
-6.2
-2.8
-55 to...
