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AP6G06S - 60V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V（Type：70mΩ）.

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Datasheet preview – AP6G06S

Datasheet Details

Part number AP6G06S
Manufacturer APM
File Size 1.13 MB
Description 60V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP6G06S Datasheet
Additional preview pages of the AP6G06S datasheet.

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Full PDF Text Transcription

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AP6G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.
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