AP70N20MP Datasheet | APM

Description The AP70N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 200V ID =70A RDS(ON) < 38mΩ @ VGS=10V （Type：30mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack TO-247-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS ID IDM VGS EAS IAR EAR PD TJ, Tstg Rth JC Rth JA Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanche Energy note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Marking AP70N20MP Value TO-247-3L 200 70 280 ±20 1800 25 20 367 -55~+150 1.5 40 Qty(PCS) 500 Unit V A A V m J A m J W ºC ºC/W ºC/W AP70N20MP RVE1.1 永源微電子科技有限公司 200V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0V, ID = 250µA 200 220...