AP70P03P Datasheet | APM

Description AP70P03PIT -30V P-Channel Enhancement Mode MOSFET The AP70P03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-78A RDS(ON) <13mΩ @ VGS=-10V （Type：8.8mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking TO-220-3L AP70P03P XXX YYYY AP70P03T TO-263-3L AP70P03T XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature...