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AP70P03P - -30V P-Channel Enhancement Mode MOSFET

General Description

The AP70P03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -30V ID =-78A RDS(ON).

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Datasheet Details

Part number AP70P03P
Manufacturer APM
File Size 1.54 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP70P03P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP70P03PIT -30V P-Channel Enhancement Mode MOSFET The AP70P03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-78A RDS(ON) <13mΩ @ VGS=-10V （Type：8.