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AP75N10F - 100V N-Channel Enhancement Mode MOSFET

General Description

The AP75N10F/P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =75A RDS(ON) < 18mΩ@ VGS=10V （Type：11mΩ）.

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Datasheet Details

Part number AP75N10F
Manufacturer APM
File Size 759.00 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP75N10F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP75N10FIPIT 100V N-Channel Enhancement Mode MOSFET The AP75N10F/P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.