AP75N10P Datasheet | APM

Description AP75N10FIPIT 100V N-Channel Enhancement Mode MOSFET The AP75N10F/P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =75A RDS(ON) < 18mΩ@ VGS=10V （Type：11mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP75N10F TO-220F-3L TO-220-3L AP75N10T TO-263-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junctionambient Maximum Thermal Resistance, Junction-case AP75N10F/P/T REV1.0 Marking AP75N10F XXX YYYY AP75N10P XXX YYYY AP75N10T XXX YYYY Qty(PCS) 1000 1000 800 Rating 100 ±20 75 38 236 108 40 146 -55 to 150 -55 to 150 62.5 1.4 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W 永源微電子科技有限公司 AP75N10PIT 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter...