Datasheet Details
| Part number | AP20G02DF |
|---|---|
| Manufacturer | APM |
| File Size | 1.76 MB |
| Description | 20V N+P-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP20G02DF Datasheet
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General Description
The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V ID =25A RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ） VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16mΩ）.