DESCRIPTION
AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =25A RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ） VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16mΩ） Application Wireless charging Brushless motor Package Marking and Ordering Information Product ID Pack Marking AP20G02DF PDFN3*3-8L AP20G02DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch VDS Drain-Source Voltage 30 VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 ±20 25 17.4 78 150 IAS Avalanche Current 72 PD@TC=25℃ Total Power Dissipation4 46 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 25 RθJC Thermal Resistance Junction-Case1 5 P-Ch -30 ±20 -20 -15.5 -69.1 135 68 41.3 -55 to 150 -55 to 150 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/...
APM
