Datasheet Summary
Description
20V N+P-Channel Enhancement Mode MOSFET
The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 20V ID =25A
RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ）
VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16mΩ）
Application
Wireless charging Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
PDFN3- 3-8L
AP20G02DF XXX...