AP20G02DF Datasheet 20v N+p-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

Datasheet Details

Part number	AP20G02DF
Manufacturer	APM
File Size	1.76 MB
Description	20V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP20G02DF-APM.pdf

General Description

AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

VDS = 20V ID =25A RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ） VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16mΩ）.

AP20G02DF Distributor

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