AP20G04GD
AP20G04GD is 40V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP20G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 40V ID =20A RDS(ON) < 32mΩ @ VGS=10V （Type：24mΩ）
VDS = -40V ID = -18A RDS(ON) <48mΩ @ VGS= -10V （Type：42mΩ）
Application Boost driver Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
TO-252-4L
AP20G04GD XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS
Parameter Drain-Source Voltage
N-Ch 40
Rating
P-Ch -40
Gate-Source Voltage
±20
±20
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
-18
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
-16
Pulsed Drain Current2
-36
Single Pulse Avalanche Energy3
Avalanche Current
-10
PD@TC=25℃...
