Datasheet Details
| Part number | AP20G04GD |
|---|---|
| Manufacturer | APM |
| File Size | 1.83 MB |
| Description | 40V N+P-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP20G04GD Datasheet
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General Description
The AP20G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 40V ID =20A RDS(ON) < 32mΩ @ VGS=10V （Type：24mΩ） VDS = -40V ID = -18A RDS(ON).