AP20G02BDF
AP20G02BDF is 20V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
20V N+P-Channel Enhancement Mode MOSFET
The AP20G02BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 20V ID =20A
RDS(ON) <18mΩ @ VGS=10V （Type：12mΩ）
VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-10V（Type：25mΩ）
Application
High Frequency Circuit low-power consumption
Package Marking and Ordering Information
Product ID
Pack
PDFN3- 3-8L
Marking AP20G02BDF XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Drain-Source Voltage
-20
VGS ID@TA=25℃
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1
±12
±12
-18.8
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
-15.5
IDM EAS PD@TA=25℃
Pulsed Drain Current2 Single Pulse Avalanche Energy3
Total Power Dissipation4
-54...
