DESCRIPTION
AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =20A RDS(ON) <18mΩ @ VGS=10V （Type：12mΩ） VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-10V（Type：25mΩ） Application High Frequency Circuit low-power consumption Package Marking and Ordering Information Product ID Pack AP20G02BDF PDFN3*3-8L Marking AP20G02BDF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS ID@TA=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 ±12 ±12 20 -18.8 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 16.2 -15.5 IDM EAS PD@TA=25℃ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 60 -54 85 78 3.5 3.5 TSTG Storage Temperature Range -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 105 50 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP20G02BDF REV1.1 永源微電子科技有限公司 1 AP20...
APM
