AP20G03BDF
AP20G03BDF is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
30V N+P-Channel Enhancement Mode MOSFET
The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =20A
RDS(ON) <12mΩ @ VGS=4.5V （Type：8.5mΩ）
VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-4.5V（Type：25mΩ）
Application
High Frequency Circuit low-power consumption
Package Marking and Ordering Information
Product ID
Pack
PDFN3- 3-8L
Marking AP20G03BDF XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
Drain-Source Voltage
Gate-Source Voltage
±12
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
ID@TA=70℃ IDM EAS
Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2
Single Pulse Avalanche Energy3
16.2 60 85
PD@TA=25℃
Total Power Dissipation4
P-Ch -30 ±12 -18.8
-15.5 -54 78 3.5
TSTG
Storage Temperature Range
-55 to 150
TJ RθJA
Operating Junction Temperature Range Thermal Resistance Junction-Ambient...
