DESCRIPTION
AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =20A RDS(ON) <12mΩ @ VGS=4.5V （Type：8.5mΩ） VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-4.5V（Type：25mΩ） Application High Frequency Circuit low-power consumption Package Marking and Ordering Information Product ID Pack AP20G03BDF PDFN3*3-8L Marking AP20G03BDF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±12 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 20 ID@TA=70℃ IDM EAS Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 16.2 60 85 PD@TA=25℃ Total Power Dissipation4 3.5 P-Ch -30 ±12 -18.8 -15.5 -54 78 3.5 TSTG Storage Temperature Range -55 to 150 TJ RθJA Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 -55 to 150 105 RθJC Thermal Resistance Junction-Case1 50 Qty(PCS) 5000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP20G03BDF REV1.0 永源微電子科技有限公司 1 A...
APM
