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AP20G03BDF - 30V N+P-Channel Enhancement Mode MOSFET

General Description

The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =20A RDS(ON).

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Datasheet Details

Part number AP20G03BDF
Manufacturer APM
File Size 1.30 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20G03BDF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =20A RDS(ON) <12mΩ @ VGS=4.5V （Type：8.5mΩ） VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-4.