AP20G04NF
AP20G04NF is 40V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
40V N+P-Channel Enhancement Mode MOSFET
The AP20G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 40V ID =23 A RDS(ON) < 18mΩ @ VGS=10V
Only
VDS = -40V ID = -20A RDS(ON) < 32mΩ @ VGS=10V
Use
Application
Wireless charging Boost driver times
Brushless motor
Package Marking and Ordering Information g Product ID
Pack
Marking en AP20G04NF
PDFN5- 6-8L
AP20G04NF XXX YYYY sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) ong Symbol T VDS
Parameter Drain-Source Voltage
N-Ch 40
Rating
P-Ch -40
For ID@TC=25℃
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1
±20 23
±20 -20
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1
-16
Qty(PCS) 5000
Units V V A A
Pulsed Drain Current2
-40
Single Pulse Avalanche Energy3
66 m...
