DESCRIPTION
AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =23 A RDS(ON) < 18mΩ @ VGS=10V Only VDS = -40V ID = -20A RDS(ON) < 32mΩ @ VGS=10V Use Application Wireless charging Boost driver times Brushless motor Package Marking and Ordering Information g Product ID Pack Marking en AP20G04NF PDFN5*6-8L AP20G04NF XXX YYYY sh ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) ong Symbol T VDS Parameter Drain-Source Voltage N-Ch 40 Rating P-Ch -40 VGS For ID@TC=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 ±20 23 ±20 -20 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 18 -16 Qty(PCS) 5000 Units V V A A IDM Pulsed Drain Current2 46 -40 A EAS Single Pulse Avalanche Energy3 28 66 mJ IAS Avalanche Current 17.8 -27.2 A PD@TC=25℃ Total Power Dissipation4 25 31.3 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 -55 to...
APM
