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AP20G04NF - 40V N+P-Channel Enhancement Mode MOSFET

General Description

The AP20G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =23 A RDS(ON) < 18mΩ @ VGS=10V Only VDS = -40V ID = -20A RDS(ON) < 32mΩ @ VGS=10V Use.

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Datasheet Details

Part number AP20G04NF
Manufacturer APM
File Size 2.26 MB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20G04NF Datasheet

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sales.Mr.wang13826508770 www.sztssd.com Description AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP20G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.