AP100N20MP Datasheet | APM

Description 200V N-Channel Enhancement Mode MOSFET The AP100N20MP uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 200V ID =100A RDS(ON) < 20mΩ @ VGS=10V (Type：17mΩ) Application Load Switch PWM Application Power management Package Marking and Ordering Information Product ID Pack TO-247-3L Marking AP100N20MP XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-to-Source Voltage ID@TA=25℃ Continuous Drain Current VGS @ 10V ID@TA=70℃ IDMa1 VGS EAS EAra1 IAR a1 dv/dta2 PD TJ，Tstg Continuous Drain Current VGS @ 10V Pulsed Drain Current (pulse width limited by TJM) Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy, Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Operating Junction and Storage Temperature Range RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Rating 200 100 52 300 ±30 300 75 45 5.0 375 175，- 55 To +175 Qty(PCS) 360 Units V A A A V m J m J A V/ns W ℃ ℃/ W ℃/...