DESCRIPTION
AP100N20MP 200V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 200V ID =100A RDS(ON) < 20mΩ @ VGS=10V (Type：17mΩ) Application Load Switch PWM Application Power management Package Marking and Ordering Information Product ID Pack AP100N20MP TO-247-3L Marking AP100N20MP XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-to-Source Voltage ID@TA=25℃ Continuous Drain Current VGS @ 10V ID@TA=70℃ IDMa1 VGS EAS EAra1 IAR a1 dv/dta2 PD TJ，Tstg Continuous Drain Current VGS @ 10V Pulsed Drain Current (pulse width limited by TJM) Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy, Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Operating Junction and Storage Temperature Range RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Rating 200 100 52 300 ±30 300 75 45 5.0 375 175，–55 To +175 0.45 60 Qty(PCS) 360 Units V A A A V mJ mJ A V/ns W ℃ ℃/ W ℃/ W 1 AP100N2...
APM
