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AP6G04S 40V N+P-Channel Enhancement Mode MOSFET

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Description

sales.Mr.wang13826508770 www.sztssd.com .
AP6G04S 40V N+P-Channel Enhancement Mode MOSFET The AP6G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.

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Datasheet Specifications

Part number
AP6G04S
Manufacturer
APM
File Size
2.12 MB
Datasheet
AP6G04S-APM.pdf
Description
40V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 37 50 2.5
* 1 5 ±100
* 4.8
* 4.5 14 1.2 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF A A V 2 AP6G04S RVE1.0 sales. Mr. wang13826508770 www. sztssd. com

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