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AP6H06S 60V N+N-Channel Enhancement Mode MOSFET

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Description

AP6H06S 60V N+N-Channel Enhancement Mode MOSFET .
The AP6H06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
AP6H06S
Manufacturer
APM
File Size
1.21 MB
Datasheet
AP6H06S-APM.pdf
Description
60V N+N-Channel Enhancement Mode MOSFET

Applications

* that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before u

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