AP8G02BLI - 20V N+P-Channel Enhancement Mode MOSFET

APM

AP8G02BLI Datasheet Preview — Preview of AP8G02BLI PDF

Datasheet Details

Part number	AP8G02BLI
Manufacturer	APM
File Size	1.09 MB
Description	20V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP8G02BLI-APM.pdf

AP8G02BLI Product details

Description

AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.General

Features

VDS = 20V ID =8.5A RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ） VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ）.

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Published: Mar 4, 2025 |