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AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET

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Description

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AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.

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Datasheet Specifications

Part number
AP8G02BLI
Manufacturer
APM
File Size
1.09 MB
Datasheet
AP8G02BLI-APM.pdf
Description
20V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Max.
* - 28 40 1.2 1 5 ±100
* 3.6 1.2 Unit V mΩ V uA nA S nC ns pF A V 2 AP8G02BLI REV1.0 AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET

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