AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET

APM

Description

AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET .
The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: AP8G04BS
Manufacturer: APM
File Size: 900.37 KB
Datasheet: AP8G04BS-APM.pdf
Description: 40V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Max.
* 37 50 2.5
* 1 5 ±100
* 4.8
* 4.5 14 1.2 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF A A V 2 AP8G04BS REV1.0 AP8G04BS 40V N+P

AP8G04BS Distributors

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AP8G04BS 40V N +P-Channel Enhancement Mode MOSFET APM

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