AP90N12D Datasheet - APM

AP90N12D, 120V N-Channel Enhancement Mode MOSFET

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The AP90N12D uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 7.

Applications

* , should be limited by total power dissipation. 2 AP90N12D REV1.0 Typical Characteristics AP90N12D 120V N-Channel Enhancement Mode MOSFET Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Forward Characteristics of Reverse Figure 4. RDS(ON) vs. VGS Figure 5. R

AP90N12D-APM.pdf