AP9N50D 500V N-Channel Enhancement Mode MOSFET

APM

Description

AP9N50D 500V N-Channel Enhancement Mode MOSFET .
The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switc.

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Datasheet Specifications

Part number: AP9N50D
Manufacturer: APM
File Size: 1.41 MB
Datasheet: AP9N50D-APM.pdf
Description: 500V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP9N50D RVE1.0 Typical Characteristics AP9N50D 500V N-Channel Enhancement Mode MOSFET Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics

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AP9N50D 500V N-Channel Enhancement Mode MOSFET APM

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