AP9N50D Datasheet - APM

AP9N50D 500V N-Channel Enhancement Mode MOSFET

The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

AP9N50D Features

* VDS = 500V ID =9A RDS(ON) < 720mΩ @ VGS=10V （Type：630mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP9N50D TO-252-3L AP9N50D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Sy

AP9N50D-APM.pdf