AP9N90T - 900V N-Channel Enhancement Mode MOSFET
The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and hi
AP9N90T Features
* VDS = 900V ID =9A RDS(ON) < 1000mΩ @ VGS=10V （Type：920mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP9N90F TO-220F-3L AP9N90F XXX YYYY AP9N90P TO-220-3L AP9N90P XXX YYYY AP9N90T TO-263-3L
