Description
The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy..
Features
- VDS = 900V ID =9A
RDS(ON) < 1000mΩ @ VGS=10V （Type：920mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
AP9N90F
TO-220F-3L
AP9N90F XXX YYYY
AP9N90P
TO-220-3L
AP9N90P XXX YYYY
AP9N90T
TO-263-3L
AP9N90T XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃ ID@TC=100℃
IDM EAS IAR EAR dv/dt PD Tj ,T.
