2N5642 - NPN SILICON RF POWER TRANSISTOR
2N5642 Features
* INCLUDE:
* Emitter Ballasting
* Gold Metalization
* 3/8" SOE Stud Package MAXIMUM RATINGS IC 3.0 A VCE 35 V VCB PDISS TJ TSTG θJC 65 V 30 W @ TC = 25 OC -65 OC to + 200 OC -65 OC to + 150 OC 5.8 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
