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HFT150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HFT150-28 is Designed for
.112x45° A L
PACKAGE STYLE .500 4L FLG
FEATURES:
• PG = 16 dB min. at 150 W/30 MHz • IMD3 = -28 dBc max. at 150 W (PEP) • Omnigold™ Metalization System
FULL R
Ø.125 NOM.
C B
E H
D G
F K
I J
MAXIMUM RATINGS
ID V(BR)DSS VGS PDISS TJ T STG θ JC
O O
DIM A B C D E F
MINIMUM
inches / mm
MAXIMUM
inches / mm
16 A 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.60 OC/W
O O O
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.