HFT1N60F - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol VDSS ID IDM VGS EAS IAR EAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Curre.

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Published: Mar 26, 2016 |