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HFT1N60F N-Channel MOSFET

HFT1N60F Description

HFT1N60F May 2015 HFT1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A .

HFT1N60F Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.7 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFT1N60F
Manufacturer
SemiHow
File Size
201.10 KB
Datasheet
HFT1N60F-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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